A2T20H330W24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS A2T20H330W24SR6 is a high-performance RF power transistor designed for demanding applications. Featuring LDMOS technology, this component operates at 1.88GHz with a 28V test voltage and a 700mA test current. It delivers 58W of output power and offers a gain of 16.5dB. The device is packaged in a NI-1230-4LS2L configuration and supplied on Tape & Reel (TR). This RF MOSFET is suitable for use in wireless infrastructure, base stations, and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.88GHz |
| Configuration | Dual |
| Power - Output | 58W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
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