A2T20H160W04NR3
RF MOSFET LDMOS 28V OM780-4Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF power MOSFET, part number A2T20H160W04NR3, is a 200W LDMOS device operating from 1.88GHz to 2.025GHz. This component features a 17dB gain at a test voltage of 28V and a test current of 400mA. Its OM780-4 package is supplied on tape and reel. This LDMOS FET is designed for high-power RF applications in sectors such as wireless infrastructure and broadcast. The rated voltage for this device is 65V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM780-4 |
| Current Rating (Amps) | 10µA |
| Frequency | 1.88GHz ~ 2.025GHz |
| Configuration | Dual |
| Power - Output | 200W |
| Gain | 17dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM780-4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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