A2T18S262W12NR3
RF MOSFET LDMOS 28V OM880X-2L2LManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s A2T18S262W12NR3 is an LDMOS RF power transistor designed for demanding applications. This component operates with a 28V test voltage and is rated up to 65V. It delivers a high output power of 231W within the 1.805GHz to 1.88GHz frequency range, offering a gain of 19.3dB. The device is specified with a test current of 1.6A and is supplied in the OM-880X-2L2L package, presented on tape and reel. This RF FET is suitable for use in base station infrastructure and other high-frequency power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-880X-2L2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Power - Output | 231W |
| Gain | 19.3dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-880X-2L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.6 A |
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