A2T18S261W12NR3
RF MOSFET LDMOS 28V OM880X-2L2LManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc.'s A2T18S261W12NR3 is an RF power MOSFET utilizing LDMOS technology. This component is rated for 65V with a test voltage of 28V and a current rating of 1.5A. Operating within the 1.805GHz to 1.88GHz frequency range, it delivers 280W of output power with a gain of 18.2dB. The A2T18S261W12NR3 is housed in an OM-880X-2L2L package for chassis mounting and is supplied on a tape and reel. This device is suitable for applications in the wireless infrastructure and base station markets.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-880X-2L2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Power - Output | 280W |
| Gain | 18.2dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-880X-2L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.5 A |
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