A2T18S260W12NR3
RF MOSFET LDMOS 28V OM880X-2L2LManufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T18S260W12NR3 is an RF LDMOS power transistor designed for demanding applications. This component operates within a frequency range of 1.805GHz to 1.88GHz, delivering a robust 280W of output power at a test voltage of 28V. It features a gain of 18.7dB and is specified for a continuous operation current of 1.5A. The device utilizes LDMOS technology for high performance and efficiency, making it suitable for base station infrastructure and other high-power RF systems. The A2T18S260W12NR3 is supplied in the OM-880X-2L2L package, designed for chassis mounting and delivered on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | OM-880X-2L2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Power - Output | 280W |
| Gain | 18.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | OM-880X-2L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.5 A |
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