A2T18S260-12SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T18S260-12SR3 is an RF LDMOS power transistor designed for demanding applications. This device operates within the 1.805GHz to 1.995GHz frequency range, delivering a robust 257W of output power. Key specifications include a 28V test voltage and a 1.4A test current, yielding a typical gain of 18.9dB. The transistor is housed in the NI-780-2S2L package, suitable for chassis mounting and supplied on tape and reel. Its LDMOS technology ensures high performance and reliability in wireless infrastructure, base stations, and other high-frequency power amplification systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-2S2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.995GHz |
| Power - Output | 257W |
| Gain | 18.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-2S2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1.4 A |
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