A2T18S166W12SR3
RF MOSFET LDMOS NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS, part number A2T18S166W12SR3, is a high-performance device designed for RF power amplification. Operating across a frequency range of 1.805GHz to 1.995GHz, this LDMOS transistor delivers an output power of 38W. The device features a 28V rated voltage and is housed in a NI-780-2S2L package, suitable for chassis mounting. Its robust construction and specified performance parameters make it a reliable component for applications in wireless infrastructure and base stations. The A2T18S166W12SR3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-2S2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.995GHz |
| Power - Output | 38W |
| Gain | - |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-2S2L |
| Voltage - Rated | 28 V |