A2T18S165-12SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A2T18S165-12SR3, an RF LDMOS FET designed for high-power applications. This component operates within the 1.805GHz to 1.995GHz frequency range, delivering 148W of output power at a 28V test voltage with an 800mA test current. It features an 18dB gain and is housed in a NI-780-2S2L package, suitable for chassis mounting. The device is supplied on a Tape & Reel. Its robust LDMOS technology makes it suitable for demanding applications in wireless infrastructure and base stations.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-2S2L |
| Current Rating (Amps) | 10µA |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.995GHz |
| Power - Output | 148W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-2S2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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