A2T18S162W31GSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T18S162W31GSR3 is an RF LDMOS power transistor designed for high-frequency applications. This device operates with a test voltage of 28 V and a rated voltage of 65 V, delivering 32 W of output power at 1.84 GHz. It exhibits a typical gain of 20.1 dB with a test current of 1 A. The component is housed in a NI-780GS-2L2LA package and supplied on tape and reel. Its robust performance characteristics make it suitable for use in wireless infrastructure, base stations, and other demanding RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780GS-2L2LA |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.84GHz |
| Power - Output | 32W |
| Gain | 20.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780GS-2L2LA |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1 A |
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