A2T18S160W31SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. RF MOSFET LDMOS device, part number A2T18S160W31SR3. This surface mount component, packaged as NI-780S-2L2LA, operates at 1.88GHz with a 28V test voltage and a 1A test current. It delivers 32W of output power with a gain of 19.9dB, utilizing LDMOS technology. This component is suitable for applications in wireless infrastructure and high-power RF systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-2L2LA |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.88GHz |
| Power - Output | 32W |
| Gain | 19.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-2L2LA |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1 A |
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