A2T18S160W31GSR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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The NXP USA Inc. A2T18S160W31GSR3 is an LDMOS RF power transistor designed for high-performance applications. Operating at a test voltage of 28V and rated for up to 65V, this component delivers 32W of output power at 1.88GHz with a gain of 19.9dB. It features a 1A test current and is housed in a NI-780GS-2L2LA package, suitable for chassis mounting. This robust RF FET is commonly utilized in base station infrastructure and other demanding wireless communication systems. The A2T18S160W31GSR3 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780GS-2L2LA |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.88GHz |
| Power - Output | 32W |
| Gain | 19.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780GS-2L2LA |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 1 A |
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