A2T18H450W19SR6
RF MOSFET LDMOS NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. LDMOS RF power transistor, part number A2T18H450W19SR6, offers robust performance for demanding applications. This device operates within the 1.805GHz to 1.88GHz frequency range, providing a nominal gain of 16.5dB. Designed for high-power output, it delivers 89W of power. The A2T18H450W19SR6 is housed in the NI-1230S-4S4S package, suitable for chassis mounting, and is supplied on tape and reel (TR) for efficient integration. Its LDMOS technology ensures excellent linearity and efficiency. This component finds use in base stations, radar systems, and other high-frequency power amplification applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230S-4S4S |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.805GHz ~ 1.88GHz |
| Power - Output | 89W |
| Gain | 16.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230S-4S4S |
| Voltage - Rated | 30 V |
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