A2T18H410-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T18H410-24SR6 is an LDMOS RF power transistor designed for high-frequency applications. This device operates at 1.81 GHz, delivering 71W of output power with a gain of 17.4dB at a test voltage of 28V. It features a dual configuration and is housed in a NI-1230-4LS2L package, suitable for chassis mounting. The transistor is supplied on a Tape & Reel (TR) for automated assembly. This component is engineered for demanding RF power amplification tasks across various industries, including telecommunications and industrial broadcasting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Configuration | Dual |
| Power - Output | 71W |
| Gain | 17.4dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 800 mA |
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