A2T18H160-24SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. RF MOSFET LDMOS A2T18H160-24SR3. This dual-channel RF power transistor is designed for high-frequency applications. Featuring LDMOS technology, it operates at 1.81GHz with a typical output power of 28W. The device exhibits a gain of 17.9dB at a test current of 400mA and a test voltage of 28V. It is housed in an NI-780S-4L2L package, suitable for chassis mounting, and supplied on tape and reel. This component is utilized in base station infrastructure and other high-power RF transmission systems. The rated voltage is 65V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Configuration | Dual |
| Power - Output | 28W |
| Gain | 17.9dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L2L |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 400 mA |
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