A2T18H100-25SR3
RF MOSFET LDMOS 28V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. A2T18H100-25SR3 is an RF LDMOS power transistor designed for high-power applications. This device operates at 1.81 GHz, delivering 18W of output power and a gain of 18.1dB under test conditions. It features a 28V drain voltage and a maximum rated voltage of 65V, with a test current of 230mA. The A2T18H100-25SR3 is presented in the NI-780-4S4 package, suitable for chassis mounting and supplied on tape and reel. This component is utilized in wireless infrastructure and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780-4S4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 1.81GHz |
| Configuration | Dual |
| Power - Output | 18W |
| Gain | 18.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-780-4S4 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 230 mA |
Request a Quote
Clients Also Buy
MRF6S19200HSR5
RF MOSFET LDMOS 28V NI780
MRF1513NT1
RF MOSFET LDMOS 12.5V PLD-1.5
AFG24S100HR5
RF MOSFET LDMOS NI360
