A2T07H310-24SR6
RF MOSFET LDMOS 28V NI1230Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2T07H310-24SR6 is a Radio Frequency (RF) LDMOS power transistor designed for high-power amplification. This component operates at 880MHz, delivering a power output of 47W with a typical gain of 18.6dB. The device is rated for a drain-source voltage of 70V, with testing conducted at 28V and a test current of 700mA. Its NI-1230-4LS2L package is suitable for chassis mounting, and it is supplied on a Tape & Reel (TR). This RF MOSFET is commonly utilized in applications within the wireless infrastructure and base station sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-1230-4LS2L |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 880MHz |
| Configuration | Dual |
| Power - Output | 47W |
| Gain | 18.6dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | NI-1230-4LS2L |
| Voltage - Rated | 70 V |
| Voltage - Test | 28 V |
| Current - Test | 700 mA |
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