A2I25H060GNR1
RF MOSFET LDMOS 28V TO270-17Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2I25H060GNR1 is an LDMOS RF power transistor designed for high-performance RF applications. This dual-configuration device operates at 2.59GHz, delivering 10.5W of output power with a 26.1dB gain. The transistor is rated for 65V and tested at 28V, with a test current of 26mA. Supplied in a TO-270WBG-17 package with gull-wing leads, it is suitable for surface mount configurations. This component is commonly utilized in wireless infrastructure, radar systems, and other demanding RF power amplification scenarios. The A2I25H060GNR1 is provided on a Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270-17 Variant, Gull Wing |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.59GHz |
| Configuration | Dual |
| Power - Output | 10.5W |
| Gain | 26.1dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270WBG-17 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 26 mA |
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