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A2I25D025GNR1

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A2I25D025GNR1

RF MOSFET LDMOS 28V TO270-17

Manufacturer: NXP USA Inc.

Categories: RF FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. A2I25D025GNR1 is a 28V LDMOS RF power transistor designed for high-frequency applications. This TO-270WBG-17 packaged device offers 31.9dB of gain at 2.69GHz, with a rated output power of 3.2W. Tested at 59mA, it utilizes a dual configuration and gull wing leads for surface mounting. This transistor is suitable for demanding RF power amplifier designs in sectors such as telecommunications and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-270-17 Variant, Gull Wing
Current Rating (Amps)-
Mounting TypeSurface Mount
Frequency2.69GHz
ConfigurationDual
Power - Output3.2W
Gain31.9dB
TechnologyLDMOS
Noise Figure-
Supplier Device PackageTO-270WBG-17
Voltage - Rated65 V
Voltage - Test28 V
Current - Test59 mA

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