A2I08H040NR1
RF MOSFET LDMOS 28V TO270-15Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2I08H040NR1 is an RF LDMOS power transistor designed for demanding wireless infrastructure applications. This dual-configuration device operates at 920MHz, delivering a power output of 9W with a typical gain of 30.7dB at a test voltage of 28V and a test current of 25mA. The transistor features a TO-270WB-15 package, a surface-mount solution with flat leads, suitable for high-frequency board designs. Its LDMOS technology ensures robust performance and efficiency for base station and point-to-point communication systems. The device is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270-15 Variant, Flat Leads |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 920MHz |
| Configuration | Dual |
| Power - Output | 9W |
| Gain | 30.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270WB-15 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 25 mA |
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