A2I08H040GNR1
RF MOSFET LDMOS 28V TO270-15Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2I08H040GNR1 is a high-performance RF LDMOS FET designed for demanding wireless infrastructure applications. This TO-270WBG-15 packaged device operates at 920MHz, delivering 9W of output power with a typical gain of 30.7dB. The device is rated for 65V with a test voltage of 28V and a test current of 25mA. Its gull wing lead style facilitates surface mounting. The A2I08H040GNR1 is constructed using LDMOS technology, offering excellent linearity and ruggedness. This component is commonly employed in base stations and other telecommunications equipment. The product is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-270-15 Variant, Gull Wing |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 920MHz |
| Configuration | Dual |
| Power - Output | 9W |
| Gain | 30.7dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | TO-270WBG-15 |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 25 mA |
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