A2G35S200-01SR3
RF MOSFET GAN HEMT 48V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2G35S200-01SR3 is a GaN HEMT RF power transistor designed for high-frequency applications. This component operates at a drain voltage of 48V with a typical test current of 291mA. It provides a power output of 180W across a frequency range of 3.4GHz to 3.6GHz, with a gain specification of 16.1dB. The device is housed in an NI-400S-2S package and is supplied on tape and reel. Its advanced Gallium Nitride High Electron Mobility Transistor technology makes it suitable for demanding applications in wireless infrastructure, radar systems, and satellite communications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400S-2S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.4GHz ~ 3.6GHz |
| Power - Output | 180W |
| Gain | 16.1dB |
| Technology | GaN HEMT |
| Noise Figure | - |
| Supplier Device Package | NI-400S-2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 291 mA |
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