A2G35S160-01SR3
RF MOSFET GAN 48V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2G35S160-01SR3 is a GaN RF power MOSFET designed for high-frequency applications. This device operates at 48V test voltage and delivers 51dBm output power across the 3.4GHz to 3.6GHz frequency band. It features a 15.7dB gain and a 190mA test current, housed in a NI-400S-2S surface mount package. The A2G35S160-01SR3 is suitable for use in wireless infrastructure, radar systems, and other demanding RF power amplifier designs. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400S-2S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.4GHz ~ 3.6GHz |
| Power - Output | 51dBm |
| Gain | 15.7dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-400S-2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 190 mA |
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