A2G26H281-04SR3
RF MOSFET GAN 48V NI780Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. A2G26H281-04SR3 is a Gallium Nitride (GaN) RF MOSFET designed for high-power applications. This component operates within the 2.496GHz to 2.69GHz frequency range, delivering a typical gain of 14.2dB and an output power of 50W. It is rated for a drain-source voltage of 125V, with a test voltage of 48V and a test current of 150mA. The A2G26H281-04SR3 features the NI-780S-4L package for surface mounting and is supplied on tape and reel. This RF MOSFET is suitable for applications in wireless infrastructure, radar systems, and other high-frequency power amplification needs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-780S-4L |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 2.496GHz ~ 2.69GHz |
| Power - Output | 50W |
| Gain | 14.2dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-780S-4L |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 150 mA |
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