A2G22S251-01SR3
RF MOSFET GAN 48V NI400Manufacturer: NXP USA Inc.
Categories: RF FETs, MOSFETs
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NXP USA Inc. presents the A2G22S251-01SR3, a Gallium Nitride (GaN) RF MOSFET designed for high-performance applications. This device operates across a frequency range of 1.805 GHz to 2.2 GHz, delivering a typical gain of 17.7 dB and an output power of 52 dBm. Engineered for demanding RF power amplification, it features a 48 V test voltage and a 200 mA test current, housed in a NI-400S-2S surface mount package. This component is suitable for use in wireless infrastructure, radar systems, and other advanced RF communication platforms. The A2G22S251-01SR3 is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | NI-400S-2S |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 1.805GHz ~ 2.2GHz |
| Power - Output | 52dBm |
| Gain | 17.7dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | NI-400S-2S |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 200 mA |
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