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BAP70AM,115

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BAP70AM,115

RF DIODE PIN 50V 300MW 6TSSOP

Manufacturer: NXP USA Inc.

Categories: RF Diodes

Quality Control: Learn More

NXP USA Inc. PIN RF Diode, BAP70AM-115, is a high-performance component designed for demanding RF applications. This diode features a 2-pair series configuration, offering excellent switching speed and low insertion loss. With a maximum reverse voltage of 50V and a continuous forward current capability of 100 mA, it is suitable for power handling up to 300 mW. The device exhibits a typical capacitance of 0.25pF at 20V and 1MHz, and a low ON-state resistance of 1.9 Ohms at 100 mA and 100 MHz, ensuring efficient signal transmission. Packaged in a compact 6-TSSOP (SC-88, SOT-363) surface-mount form factor and supplied on tape and reel, the BAP70AM-115 operates across a wide temperature range of -65°C to 150°C. This component finds application in various wireless communication systems, including telecommunications infrastructure and radar systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Diode TypePIN - 2 Pair Series
Operating Temperature-65°C ~ 150°C (TJ)
Capacitance @ Vr, F0.25pF @ 20V, 1MHz
Resistance @ If, F1.9Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max)50V
Supplier Device Package6-TSSOP
Current - Max100 mA
Power Dissipation (Max)300 mW

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