BAP70AM,115
RF DIODE PIN 50V 300MW 6TSSOPManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. PIN RF Diode, BAP70AM-115, is a high-performance component designed for demanding RF applications. This diode features a 2-pair series configuration, offering excellent switching speed and low insertion loss. With a maximum reverse voltage of 50V and a continuous forward current capability of 100 mA, it is suitable for power handling up to 300 mW. The device exhibits a typical capacitance of 0.25pF at 20V and 1MHz, and a low ON-state resistance of 1.9 Ohms at 100 mA and 100 MHz, ensuring efficient signal transmission. Packaged in a compact 6-TSSOP (SC-88, SOT-363) surface-mount form factor and supplied on tape and reel, the BAP70AM-115 operates across a wide temperature range of -65°C to 150°C. This component finds application in various wireless communication systems, including telecommunications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Diode Type | PIN - 2 Pair Series |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.25pF @ 20V, 1MHz |
| Resistance @ If, F | 1.9Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | 6-TSSOP |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 300 mW |
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