BAP70-04W,115
RF DIODE PIN 50V 260MW SOT323-3Manufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. presents the BAP70-04W-115, a PIN RF diode designed for high-frequency applications. This component features a series connection of one pair of PIN diodes within a compact SC-70 (SOT-323) package, supplied on tape and reel. It offers a maximum reverse voltage of 50V and can handle a continuous forward current of up to 100 mA. With a maximum power dissipation of 260 mW, this diode exhibits a low capacitance of 0.3pF at 20V and 1 MHz, and a low forward resistance of 1.9 Ohms at 100 mA and 100 MHz. The operating temperature range is from -65°C to 150°C. This device is suitable for use in various RF switching and signal modulation circuits across industries such as telecommunications and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Diode Type | PIN - 1 Pair Series Connection |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.3pF @ 20V, 1MHz |
| Resistance @ If, F | 1.9Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | SC-70 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 260 mW |
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