BAP65-05,215
RF DIODE PIN 30V 250MW TO236ABManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. presents the BAP65-05-215, a PIN RF diode featuring a common cathode dual-diode configuration. This component offers a maximum reverse voltage of 30V and a continuous forward current capability of 100mA. The BAP65-05-215 exhibits a low junction capacitance of 0.425pF at 20V and 1MHz, and a typical resistance of 350mOhm at 100mA forward current and 100MHz. With a maximum power dissipation of 250mW, it is suitable for operation across a wide temperature range from -65°C to 150°C. The diode is housed in a compact TO-236-3, SC-59, or SOT-23-3 package, supplied in tape and reel. This device finds application in RF switching and control circuits across telecommunications and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - 1 Pair Common Cathode |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.425pF @ 20V, 1MHz |
| Resistance @ If, F | 350mOhm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 30V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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