BAP65-05
PIN DIODE, 30V V(BR), SILICON, TManufacturer: NXP USA Inc.
Categories: RF Diodes
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The NXP USA Inc. BAP65-05 is a PIN diode, specifically a pair of common cathode diodes in a SOT-23 (TO-236AB) package. This silicon device offers a reverse breakdown voltage of 30V and a maximum forward current of 100 mA. Its low capacitance of 0.425pF at 20V and 1MHz, coupled with a low on-resistance of 350mOhm at 100mA and 100MHz, makes it suitable for RF switching applications across a broad operating temperature range of -65°C to 150°C. The maximum power dissipation is rated at 250 mW. This component is commonly utilized in telecommunications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - 1 Pair Common Cathode |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.425pF @ 20V, 1MHz |
| Resistance @ If, F | 350mOhm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 30V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |
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