BAP64-05,215
RF DIODE PIN 175V 250MW TO236ABManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. presents the BAP64-05-215, a PIN RF diode. This component is configured as a single pair, common cathode arrangement, designed for high-frequency applications. It features a maximum reverse voltage rating of 175V and can handle a forward current of up to 100 mA. The diode offers a maximum power dissipation of 250 mW. Key electrical characteristics include a capacitance of 0.35pF at 20V and 1MHz, and a forward resistance of 1.35 Ohms at 100 mA and 100 MHz. The BAP64-05-215 is supplied in a TO-236-3, SC-59, SOT-23-3 (TO-236AB) package, delivered on tape and reel. This device is suitable for use in wireless infrastructure and consumer electronics. The operating temperature range is from -65°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - 1 Pair Common Cathode |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 20V, 1MHz |
| Resistance @ If, F | 1.35Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 175V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 250 mW |