BAP63-03,115
RF DIODE PIN 50V 500MW SOD323Manufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. presents the BAP63-03-115, a single PIN RF diode designed for demanding RF switching and attenuation applications. This component offers a maximum reverse voltage of 50V and can handle a continuous forward current of up to 100 mA. With a specified forward resistance of 1.5 Ohms at 100 mA and 100 MHz, and a capacitance of 0.32 pF at 20V and 1 MHz, the BAP63-03-115 provides excellent RF performance characteristics. The diode is rated for a maximum power dissipation of 500 mW and operates within a temperature range of -65°C to 150°C. Supplied in a compact SOD-323 package, it is ideal for use in wireless communication systems, radar, and general RF circuit design where space and performance are critical. The BAP63-03-115 is delivered on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-76, SOD-323 |
| Diode Type | PIN - Single |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.32pF @ 20V, 1MHz |
| Resistance @ If, F | 1.5Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | SOD-323 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 500 mW |
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