BAP55L,315
RF DIODE PIN 50V 500MW DFN1006-2Manufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. presents the BAP55L-315, a single PIN RF diode. This component is engineered for high-frequency applications, offering a maximum reverse voltage of 50V and a continuous forward current of 100 mA. With a maximum power dissipation of 500 mW, it is suitable for demanding RF switching and attenuator circuits. The BAP55L-315 exhibits a low capacitance of 0.28pF at 20V and 1MHz, crucial for maintaining signal integrity. Its low resistance of 700mOhm at 100mA and 100MHz ensures efficient signal passage. The device operates across a temperature range of -65°C to 150°C and is supplied in a compact DFN1006-2 package, also known as SOD-882, on tape and reel for automated assembly. This RF diode finds application in wireless communication systems, radar, and other high-frequency electronic devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Diode Type | PIN - Single |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.28pF @ 20V, 1MHz |
| Resistance @ If, F | 700mOhm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | DFN1006-2 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 500 mW |
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