BAP51L,315
RF DIODE PIN 60V 500MW DFN1006-2Manufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. BAP51L-315 is a single PIN RF diode designed for demanding RF switching and attenuation applications. This component features a reverse voltage rating of 60V and a maximum continuous forward current of 100mA, with a power dissipation capability of 500mW. The device exhibits low capacitance at 5V (0.3pF at 1MHz) and a low ON-state resistance of 1.5 Ohms at 100mA and 100MHz, ensuring efficient signal handling. Supplied in a compact DFN1006-2 (SOD-882) package on tape and reel, the BAP51L-315 operates across a wide temperature range of -65°C to 150°C. This PIN diode is suitable for use in broadband RF front-ends, antenna switching, and variable attenuator circuits within the telecommunications and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-882 |
| Diode Type | PIN - Single |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.3pF @ 5V, 1MHz |
| Resistance @ If, F | 1.5Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 60V |
| Supplier Device Package | DFN1006-2 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 500 mW |
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