BAP51-05W
PIN DIODE, 50V V(BR), SILICONManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. BAP51-05W is a silicon PIN diode designed for RF switching applications. This component features a breakdown voltage (Vbr) of 50V and a maximum continuous forward current of 50 mA. The diode is configured as a series-connected pair, offering a low on-state resistance of 2.5 Ohms at 10 mA and 100 MHz, and a capacitance of 0.35 pF at 5V and 1 MHz. With a maximum power dissipation of 240 mW and an operating temperature range of -65°C to 150°C, the BAP51-05W is suitable for use in broadband applications, including RF switching matrices, attenuators, and phase shifters within wireless infrastructure and test equipment. It is supplied in a compact SC-70 (SOT-323) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Diode Type | PIN - 1 Pair Series Connection |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.35pF @ 5V, 1MHz |
| Resistance @ If, F | 2.5Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | SC-70 |
| Current - Max | 50 mA |
| Power Dissipation (Max) | 240 mW |
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