BAP50-05,215
RF DIODE PIN 50V 250MW TO236ABManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. RF Diode BAP50-05-215 is a PIN diode component featuring a common cathode dual configuration. This device is rated for a peak reverse voltage of 50V and a maximum continuous forward current of 50mA. It exhibits a low on-state resistance of 5 Ohms at 10mA and 100MHz, with a typical capacitance of 0.5pF at 5V and 1MHz. The BAP50-05-215 is packaged in a SOT-23 (TO-236AB) surface-mount case, suitable for high-volume manufacturing. With a power dissipation capability of 250mW and an operating temperature range of -65°C to 150°C, this RF diode is designed for applications in wireless communication systems and RF switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - 1 Pair Common Cathode |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.5pF @ 5V, 1MHz |
| Resistance @ If, F | 5Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Max | 50 mA |
| Power Dissipation (Max) | 250 mW |
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