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BAP50-05,215

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BAP50-05,215

RF DIODE PIN 50V 250MW TO236AB

Manufacturer: NXP USA Inc.

Categories: RF Diodes

Quality Control: Learn More

NXP USA Inc. RF Diode BAP50-05-215 is a PIN diode component featuring a common cathode dual configuration. This device is rated for a peak reverse voltage of 50V and a maximum continuous forward current of 50mA. It exhibits a low on-state resistance of 5 Ohms at 10mA and 100MHz, with a typical capacitance of 0.5pF at 5V and 1MHz. The BAP50-05-215 is packaged in a SOT-23 (TO-236AB) surface-mount case, suitable for high-volume manufacturing. With a power dissipation capability of 250mW and an operating temperature range of -65°C to 150°C, this RF diode is designed for applications in wireless communication systems and RF switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Diode TypePIN - 1 Pair Common Cathode
Operating Temperature-65°C ~ 150°C (TJ)
Capacitance @ Vr, F0.5pF @ 5V, 1MHz
Resistance @ If, F5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max)50V
Supplier Device PackageSOT-23 (TO-236AB)
Current - Max50 mA
Power Dissipation (Max)250 mW

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