BAP50-04,215
SILICON PIN DIODEManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. BAP50-04-215 is a silicon PIN diode designed for high-frequency applications. This component features a series connection of two PIN diodes within a single SOT-23 (TO-236AB) package, offering a nominal capacitance of 0.5pF at 5V and 1MHz. It supports a maximum forward current of 50 mA and a peak reverse voltage of 50V, with a power dissipation rating of 250 mW. The diode exhibits a low resistance of 5 Ohms at 10mA and 100MHz, making it suitable for RF switching and attenuation circuits. Its operating temperature range is -65°C to 150°C (TJ). This device finds application in telecommunications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Diode Type | PIN - 1 Pair Series Connection |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.5pF @ 5V, 1MHz |
| Resistance @ If, F | 5Ohm @ 10mA, 100MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Max | 50 mA |
| Power Dissipation (Max) | 250 mW |
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