BAP1321LX,315
RF DIODE PIN 60V 130MW 2DFNManufacturer: NXP USA Inc.
Categories: RF Diodes
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NXP USA Inc. BAP1321LX-315 is a single PIN RF diode designed for high-frequency applications. This component features a maximum reverse voltage of 60V and a continuous forward current handling capability of 100 mA. With a power dissipation rating of 130 mW and a low forward resistance of 1.3 Ohms at 100 mA and 100 MHz, it is suitable for demanding RF switching and attenuation circuits. The diode exhibits a typical capacitance of 0.28 pF at 20V and 1 MHz, minimizing parasitic effects. Packaged in a compact DFN1006D-2 (2-XDFN) footprint and supplied on tape and reel, the BAP1321LX-315 is engineered for efficient surface-mount assembly. Its operational temperature range spans from -65°C to 150°C, ensuring reliability across various environmental conditions. This RF diode finds utility in wireless infrastructure, satellite communications, and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-XDFN |
| Diode Type | PIN - Single |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Capacitance @ Vr, F | 0.28pF @ 20V, 1MHz |
| Resistance @ If, F | 1.3Ohm @ 100mA, 100MHz |
| Voltage - Peak Reverse (Max) | 60V |
| Supplier Device Package | DFN1006D-2 |
| Current - Max | 100 mA |
| Power Dissipation (Max) | 130 mW |