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MMZ25332BT1

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MMZ25332BT1

IC AMP LTE 1.8GHZ-2.8GHZ 12QFN

Manufacturer: NXP USA Inc.

Categories: RF Amplifiers

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NXP USA Inc. MMZ25332BT1 is a high-performance RF amplifier designed for demanding wireless applications. This component offers a broad operating frequency range of 1.8GHz to 2.8GHz, making it suitable for LTE, TDS-CDMA, and W-CDMA standards. With a typical gain of 26.5dB at 2.5GHz and a P1dB output power of 33dBm, the MMZ25332BT1 delivers robust signal amplification. The noise figure is rated at 5.8dB, ensuring excellent signal-to-noise ratio. Powering this device requires a supply voltage between 3V and 5V, drawing a current of 390mA. The MMZ25332BT1 is supplied in a compact 12-QFN (3x3) package, featuring an exposed pad for enhanced thermal performance, and is provided on tape and reel for efficient surface mounting. This amplifier finds application in areas such as mobile infrastructure and wireless communication systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case12-VFQFN Exposed Pad
Mounting TypeSurface Mount
Frequency1.8GHz ~ 2.8GHz
RF TypeLTE, TDS-CDMA, W-CDMA
Voltage - Supply3V ~ 5V
Gain26.5dB
Current - Supply390mA
Noise Figure5.8dB
P1dB33dBm
Test Frequency2.5GHz
Supplier Device Package12-QFN (3x3)

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