Home

Products

Integrated Circuits (ICs)

Memory

Memory

MR2A16ATS35C

Banner
productimage

MR2A16ATS35C

IC RAM 4MBIT PARALLEL 44TSOP II

Manufacturer: NXP USA Inc.

Categories: Memory

Quality Control: Learn More

NXP USA Inc. presents the MR2A16ATS35C, a 4Mbit Magnetoresistive RAM (MRAM) memory device with a parallel interface. This non-volatile memory component offers a fast 35 ns access time and a memory organization of 256K x 16. Designed for robust data retention and high endurance, the MR2A16ATS35C is suitable for applications requiring frequent write cycles and instant data availability upon power-up. Its 44-TSOP II package facilitates surface mounting and is commonly found in industrial control systems, automotive electronics, and data logging applications where reliable, persistent memory is critical. The device operates over a voltage range of 3V to 3.6V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case44-TSOP (0.400"", 10.16mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)
Voltage - Supply3V ~ 3.6V
TechnologyMRAM (Magnetoresistive RAM)
Memory FormatRAM
Supplier Device Package44-TSOP II
Write Cycle Time - Word, Page35ns
Memory InterfaceParallel
Access Time35 ns
Memory Organization256K x 16
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
MCM69C432TQ20

IC RAM 1MBIT PAR 100TQFP

product image
PCF85116-3T/01,118

IC EEPROM 16KBIT I2C 400KHZ 8SO

product image
PCA8581CT/6,112

IC EEPROM 1KBIT I2C 100KHZ 8SO