PMBFJ309,215
JFET N-CH 25V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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NXP USA Inc. PMBFJ309-215 is an N-channel JFET designed for high-frequency applications. This component features a drain-source voltage (Vdss) of 25 V and a maximum power dissipation of 250 mW. The SOT-23 (TO-236AB) surface mount package is ideal for automated assembly, commonly found in RF circuits, amplifier stages, and signal switching applications. Key electrical characteristics include a typical drain current (Idss) of 12 mA at 10 V (Vgs=0) and a gate-source cutoff voltage (VGS off) of 1 V at 1 µA. The input capacitance (Ciss) is specified at a maximum of 5 pF at 10 V. The device operates within an extended temperature range of 150°C. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 50 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 12 mA @ 10 V |
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