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PMBFJ177,215

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PMBFJ177,215

JFET P-CH 30V SOT23

Manufacturer: NXP USA Inc.

Categories: JFETs

Quality Control: Learn More

NXP USA Inc. PMBFJ177-215 is a P-channel JFET designed for general-purpose amplification and switching applications. This component features a Drain to Source Voltage (Vdss) of 30 V and a maximum power dissipation of 300 mW. The device is housed in a compact SOT-23 (TO-236AB) surface mount package, ideal for space-constrained designs. Key electrical characteristics include a typical Drain current (Idss) of 1.5 mA at 15 V (Vgs=0) and a gate-source cutoff voltage (Vgs off) of 800 mV at 10 nA. Input capacitance (Ciss) is specified at a maximum of 8 pF at 10 V (Vgs). The operating temperature range extends to 150°C (TJ). This JFET is suitable for use in consumer electronics and industrial control systems. The PMBFJ177-215 is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds8pF @ 10V (VGS)
Voltage - Breakdown (V(BR)GSS)30 V
Supplier Device PackageSOT-23 (TO-236AB)
Drain to Source Voltage (Vdss)30 V
Power - Max300 mW
Resistance - RDS(On)300 Ohms
Voltage - Cutoff (VGS off) @ Id800 mV @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0)1.5 mA @ 15 V

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