PMBFJ175,215
JFET P-CH 30V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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NXP USA Inc. P-Channel JFET, part number PMBFJ175-215, offers a 30V breakdown voltage and a 300mW power dissipation. This SOT-23 packaged device features a drain current (Idss) of 7mA at 15V Vds (Vgs=0) and a Vgs(off) of 3V at 10nA. The input capacitance (Ciss) is a maximum of 8pF at 10V Vds. With a typical RDS(On) of 125 Ohms, this component is suitable for applications requiring precise control of current flow. Operating temperature extends up to 150°C (TJ). This JFET is commonly utilized in switching, amplification, and analog signal processing circuits within the telecommunications and industrial automation sectors. Packaging is provided on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 300 mW |
| Resistance - RDS(On) | 125 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
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