PMBFJ112,215
JFET N-CH 40V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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The NXP USA Inc. PMBFJ112-215 is an N-channel JFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 40V and a breakdown gate-source voltage (V(BR)GSS) of 40V, with a gate-source cutoff voltage (VGS off) of 5V at 1µA. It offers a maximum drain current (Idss) of 5mA at 15V and a typical on-resistance (RDS(On)) of 50 Ohms. With a maximum power dissipation of 300mW and an operating junction temperature of 150°C, this JFET is suitable for demanding environments. The device is supplied in a compact SOT-23 (TO-236AB) surface mount package, delivered on tape and reel. Its characteristics make it a valuable component in various electronic systems, including RF amplification and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 300 mW |
| Resistance - RDS(On) | 50 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
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