PMBFJ111,215
JFET N-CH 40V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
Quality Control: Learn More
The NXP USA Inc. PMBFJ111-215 is an N-channel JFET designed for versatile applications. This component features a Drain to Source Voltage (Vdss) of 40 V and a maximum power dissipation of 300 mW. The JFET operates with a breakdown voltage (V(BR)GSS) of 40 V and a typical gate-source cutoff voltage (VGS off) of 10 V at 1 µA. Its drain current (Idss) is specified at 20 mA at 15 V (Vgs=0). With a low input capacitance (Ciss) of 6 pF at 10 V (VGS), it is suitable for high-frequency signal amplification. The device is housed in a SOT-23 (TO-236AB) surface-mount package, facilitating automated assembly. Operating temperature ranges up to 150°C (TJ). This component is commonly utilized in RF amplification and switching circuits across various industries. The NXP USA Inc. PMBFJ111-215 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 300 mW |
| Resistance - RDS(On) | 30 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
Request a Quote
Clients Also Buy
J174,126
JFET P-CH 30V TO92-3
PMBFJ620,115
JFET 2N-CH 25V 6TSSOP
BFR31,215
JFET N-CH 10MA SOT23
