PMBFJ110,215
JFET N-CH 25V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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NXP USA Inc. presents the PMBFJ110-215, an N-channel JFET with a Drain to Source Voltage (Vdss) of 25 V and a continuous Drain Current (Idss) of 10 mA at 15 V (Vgs=0). This device features a maximum power dissipation of 250 mW and a breakdown voltage (V(BR)GSS) of 25 V. The gate pinch-off voltage (VGS off) is specified at 4 V @ 1 µA. With an input capacitance (Ciss) of 30 pF (Max) at 10 V (VGS), the PMBFJ110-215 offers a low on-resistance of 18 Ohms. The component is housed in a SOT-23 (TO-236AB) surface mount package, suitable for applications requiring compact designs. It is supplied in Tape & Reel (TR) packaging and operates within a temperature range of -55°C to 150°C (TJ). This JFET is commonly utilized in RF amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 18 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 15 V |
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