PMBFJ108,215
JFET N-CH 25V SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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NXP USA Inc. PMBFJ108-215 is an N-Channel JFET designed for applications requiring high input impedance and low noise. This component features a drain-source voltage (Vdss) of 25V and a maximum power dissipation of 250mW. The current at zero gate-source voltage (Idss) is specified at 80mA @ 15V, with a gate-source cutoff voltage (VGS off) of 10V @ 1µA. The device exhibits a typical drain-to-source on-resistance (RDS(On)) of 8 Ohms. With a maximum operating junction temperature of 150°C, the PMBFJ108-215 is housed in a SOT-23 (TO-236AB) surface-mount package, supplied on tape and reel. Its typical input capacitance (Ciss) is 30pF @ 10V (VGS). This JFET is commonly utilized in RF amplification, switching, and analog signal processing circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 8 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 15 V |
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