NXP USA Inc. JFET, P-Channel, J177-126. This TO-92-3 packaged component features a Drain to Source Voltage (Vdss) of 30V and a maximum power dissipation of 400mW. The J177-126 offers a typical Idss of 1.5 mA @ 15V (Vgs=0) and a Vgs(off) of 800mV @ 10nA. Input capacitance (Ciss) is specified at 8pF @ 10V (VGS). The device is suitable for through-hole mounting and operates at junction temperatures up to 150°C. This component finds application in industrial and consumer electronics. The J177-126 is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 300 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.5 mA @ 15 V |
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