NXP USA Inc. JFET, P-Channel, part number J176-126. This TO-92-3 packaged device offers a Drain to Source Voltage (Vdss) of 30 V and a maximum power dissipation of 400 mW. Key specifications include a maximum Gate-Source Cutoff Voltage (VGS off) of 1 V at 10 nA and a Drain Current (Idss) of 2 mA at 15 V (Vgs=0). The device features a typical input capacitance (Ciss) of 8 pF at 10 V (VGS). Mounting is via through-hole, with the package conforming to TO-226-3, TO-92-3 (TO-226AA) standards. This component is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 250 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 15 V |
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