NXP USA Inc. JFET P-Channel device, J175-116, offers a 30V drain-to-source breakdown voltage and a 3V gate-source cutoff voltage. This TO-92-3 packaged component features a maximum power dissipation of 400 mW and an on-resistance (RDS(On)) of 125 Ohms. The typical drain current (Idss) is 7 mA at 15V Vds with Vgs=0, and the input capacitance (Ciss) is a maximum of 8pF at 10V Vds (VGS). Designed for through-hole mounting, it operates efficiently up to 150°C. This component is suitable for applications in general-purpose amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 125 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
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