NXP USA Inc. JFET, P-Channel, part number J174-126. This device features a drain-to-source breakdown voltage (Vdss) of 30V and a maximum power dissipation of 400 mW. The specified gate-source cutoff voltage (VGS off) is 5V at 10 nA. The current, drain (Idss) at Vds=15V and Vgs=0 is 20 mA. It offers a typical on-resistance (RDS(On)) of 85 Ohms. This TO-92-3 packaged JFET is suitable for through-hole mounting and operates at junction temperatures up to 150°C. The J174-126 is utilized in applications such as general-purpose switching and amplification across various industrial and consumer electronics sectors. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 8pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 85 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
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