NXP USA Inc. JFET N-Channel J113-126 offers a 40 V drain-to-source breakdown voltage and 400 mW maximum power dissipation. This TO-92-3 packaged component features a nominal drain current (Idss) of 2 mA at 15 V (Vds, Vgs=0) and a gate-source cutoff voltage (VGS off) of 500 mV at 1 µA. The input capacitance (Ciss) is a maximum of 6 pF at 10 V (Vds, Vgs=0). Mounting is via through-hole with a TO-226-3, TO-92-3 (TO-226AA) formed leads package. The operating junction temperature reaches 150°C. Resistance (RDS(On)) is 100 Ohms. This device is commonly utilized in analog switching, amplification, and signal conditioning applications across various industrial and consumer electronics sectors. Packaging is supplied in Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 100 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 15 V |
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